Vertical Cu2ZnSnS4 (CZTS) nanowire arrays have been synthesized via two-step electroplating method into anodized aluminum oxide template. For deposition of CZTS nanowires, anodized aluminum oxide (AAO) was used as the growth mask for the growth of the nanowires. AAO templates with hole sizes of 70 nm in diameter were used in the experiments. After electroplating of CuZu/CuSn, vertical CuZu/CuSn nanowires were obtained on Mo-coated Si substrates and the typical size of nanowire and AAO of the same size. And the elemental compositions of unannealed CuZu/CuSn nanowires about 2:1:1. Sulfurization was performed at 600 0Cfor 10 min in CS2+Ar atmosphere. X-ray diffraction patterns indicate that the annealed CZTS have a kesterite structure including secondary metal and metal sulfide phases. It is found that the conditions of sulfurization treatment affect the quality of CZTS absorber layer.
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